Interconnect assemblies with probed bond pads

ABSTRACT

An interconnect assembly includes a bond pad and an interconnect structure configured to electrically couple an electronic structure to the bond pad. The interconnect structure physically contacts areas of the bond pad that are located outside of a probe contact area that may have been damaged during testing. Insulating material covers the probe contact area and defines openings spaced apart from the probe contact area. The interconnect structure extends through the openings to contact the bond pad.

TECHNICAL FIELD

The present technology is related to microelectronic devices withinterconnect assemblies and associated methods of manufacturing thesame. In particular, the present technology is related to interconnectassemblies with probed bond pads.

BACKGROUND

Conventional microelectronic devices often have vertical electricalconnections that extend through wafers or semiconductor dies. One typeof vertical electrical connection is a through-silicon via (“TSV”) oftenused in stacked semiconductor devices. A TSV in the wafer can beelectrically coupled to a bond pad. A pillar can electrically couple thebond pad to another device, such as an active side of a semiconductordie. Before forming the pillar, wafer-level probing is often used toevaluate electrical characteristics of the wafer and involves contactingbond pads with probe pins to send electrical signals to the wafer.Unfortunately, the probe pins may damage (e.g., roughen, scratch, gouge,etc.) the bond pads. If a bond pad is made of aluminum, a probe pin canpass through a thin oxide layer on the bond pad and cause significantdamage to the bond pad. Such damage is commonly referred to as a “probemark” and may impact subsequent processing and decrease product yields.

FIGS. 1 and 2 show a portion of a bond pad assembly 90 of a conventionalwafer 100. Referring to FIG. 1, the wafer 100 includes a polyimide layer110 having an opening 120 at a central region of a probed bond pad 130(illustrated in phantom) of the bond pad assembly 90. A probe mark inthe form of an elongated groove 140 extends across an exposed surface142 (FIG. 2) of the bond pad 130 and underneath the polyimide layer 110.The polyimide layer 110 is deposited and the openings 120 are formed byaligning and development after wafer-level probing. FIG. 2 showsunwanted residual material 144 (e.g., polyimide material at the bottomof the opening 120) left due to improper development of the polyimidelayer 110. Such residual material 144 is often referred to as“scumming,” and excess scumming may make it difficult to form a pillar(not shown) that contacts the bond pad 130.

FIG. 3 shows a stage of forming the opening 120 in the polyimide layer.Light rays or other radiation, represented by arrows, is used to developthe polyimide layer 110. The elongated groove 140 causes scattering ofthe radiation. For example, rays reflected from ends 143, 145 of theelongated groove 140 can travel towards the center of the opening 120and cause crosslinking of the polyimide which results in insufficientdevelopment of the polyimide material. This can cause scumming in theform of a residual feature 150 to be left in the opening 120. Thescattered radiation can also lead to improperly shaped openings (e.g.,irregular shaped openings).

FIG. 4 shows an interface between a pillar 160 and a conventional probedbond pad 162. In this example, a probe mark 164 can result in a poorconnection (e.g., an electrical connection, a mechanical connection,etc.) between the pillar 160 and the bond pad 162. The probe mark 164may also have rough and irregular surfaces that prevent the formation ofa uniform barrier/seed layer on the bond pad 162. When this occurs, aprocessing substance (e.g., an etchant, an etching solution, etc.) canpass through openings in the barrier/seed layer and corrode theunderlying bond pad 162. If the bond pad 162 is made of aluminum, theupper surface of the bond pad 162 can experience significant corrosionand result in a poor electrical connection and decrease product yields.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic top plan view of a bond pad assembly of a wafer inaccordance with the prior art.

FIG. 2 is a schematic cross-sectional view of the wafer taken along line2-2 of FIG. 1 in accordance with the prior art.

FIG. 3 shows an image of an opening in a polyimide layer in accordancewith the prior art.

FIG. 4 shows a pillar connected to a bond pad assembly in accordancewith the prior art.

FIG. 5 is a schematic top plan view of a bond pad assembly in accordancewith an embodiment of the present technology.

FIG. 6 is a schematic cross-sectional view of the bond pad assemblytaken along line 6-6 of FIG. 5 in accordance with an embodiment of thepresent technology.

FIGS. 7A-7E are schematic cross-sectional views illustrating variousstages in a method of manufacturing a microelectronic device inaccordance with an embodiment of the present technology.

FIG. 8 is a schematic top plan view of a bond pad assembly in accordancewith an embodiment of the present technology.

FIG. 9A is a schematic cross-sectional view of the wafer-level bond padassembly taken along line 9A-9A of FIG. 8 in accordance with anembodiment of the present technology.

FIG. 9B is a schematic cross-sectional view of the wafer-level bond padassembly taken along line 9B-9B of FIG. 8 in accordance with anembodiment of the present technology.

FIG. 10 shows an image of an interconnect structure extending throughtwo openings in an insulating material in accordance with an embodimentof the present technology.

FIG. 11 shows an image of a portion of the interconnect structure ofFIG. 10 contacting a probed bond pad in accordance with an embodiment ofthe present technology.

DETAILED DESCRIPTION

Microelectronic devices can include interconnect assemblies thatelectrically couple microelectronic structures together. Microelectronicstructures can include, without limitation, semiconductor structures(e.g., semiconductor dies or chips), wafers (e.g., wafers withintegrated circuits, vias, bond pads, etc.), substrates,microelectromechanical systems (“MEMS”), memory, etc. The interconnectassemblies can include pads (e.g., probed bond pads) and interconnectstructures (e.g., pillars) that physically contact one or more contactareas of the bond pads. The contact areas can be spaced laterally apartfrom probe contact areas of the probed bond pads such that probe marks,if any, are spaced apart from the interface of the interconnectstructures and respective probed bond pads. A person skilled in therelevant art will understand that the present technology may haveadditional embodiments and that the present technology may be practicedwithout several of the details of the embodiments described below withreference to FIGS. 5-11.

FIG. 5 is a schematic top plan view of a portion of a wafer-level bondpad assembly 200 (“assembly 200”) of a semiconductor structure 202. Theassembly 200 can include a bond pad 208 and insulating material 210. Theinsulating material 210 overlays the bond pad 208 and has a plurality ofopenings 220 spaced apart from one another (e.g., two openingsidentified as 220 a and 220 b). The openings 220 a, 220 b expose contactareas 240 a, 240 b of the bond pad 208, respectively, such that aninterconnect structure (not shown) can be electrically coupled to thecontact areas 240 a, 240 b, rather than where the probe mark is located.The openings 220 can be holes with generally rectangular cross sections.In other embodiments, the openings 220 can have substantially polygonalcross sections (e.g., square cross sections), circular cross sections,or other shapes. The openings 220 can be offset from a central region241 of the bond pad 208, and the offset distance can be selected basedon the shape and dimensions of the bond pad 208, the shapes anddimensions of the openings 220, accuracy of probing equipment, or thelike.

The insulating material 210 has a portion 222 between the openings 220that overlays a probe contact area 230 (shown in phantom) of the bondpad 208. In some embodiments, including the illustrated embodiment, theprobe contact area 230 includes a damaged region in the form of a probemark 236 that is spaced laterally apart from both openings 220. Theconfiguration and the position of the probe contact area 230 can beselected to minimize, limit, or substantially eliminate scattering oflight (e.g., light used to develop a polyimide layer), scumming,residual features, or other problems caused by probe marks.

With continued reference to FIG. 5, the distance D₁ between the openings220 can be from about 15 μm to about 25 μm. The distance D₁ can beselected based on, for example, the configuration and dimensions of thecomponent to be coupled to the bond pad 208. The probe mark 236 and/orthe probe contact area 230 can be generally midway between the openings220. Width W of the openings 220 can be equal to or less than about 12μm. Length L of the openings 220 can be equal to or greater than about36 μm. The semiconductor structure 202 can have a passivation material250 spaced apart from the openings by a distance D₂ of about 10 μm orless. The distance D₂ can be in direction of a longitudinal axis 251 ofthe bond pad 208. In some embodiments, distance D₁, distance D₂, andwidth W can be equal to about 20 μm, 9 μm, 5 μm, respectively. Otherdimensions are also possible for other applications.

FIG. 6 is a schematic cross-sectional view of the assembly 200 furtherincluding passivation material 250 and a substrate 260. The passivationmaterial 250 can be located between a periphery 254 of the bond pad 208and the insulating material 210 and can electrically insulate circuitryin the substrate 260. An edge 256 of the passivation material 250 candefine an opening 252 through which the insulating material 210 passesto contact the bond pad 208. The openings 220 can have uniform diametersor varying diameters along their axes 257 a, 257 b.

FIGS. 7A-7E are schematic cross-sectional views illustrating variousstages in a method of manufacturing an interconnect assembly. Generally,the bond pad 208 is formed on the substrate 260 and probing equipmentcontacts the bond pad 208 to evaluate integrated circuitry the substrate260. After probing, the insulating material 210 can be disposed onto thebond pad 208 to cover an area of the probed bond pad 208 that may havebeen damaged during probing. The openings 220 can be formed in theinsulating material 210, and an interconnect structure can be formed tocontact exposed areas of the probed bond pad 208. Details of themanufacturing method are discussed in connection with FIG. 7A-7E.

FIG. 7A is a schematic cross-sectional view of the substrate 260. Thesubstrate 260 can include, without limitation, one or more vias (e.g.,TSVs, blind vias, buried vias, etc.), vertical electrical connections,contacts, circuitry, or the like. In some embodiments, the substrate 260is a wafer (e.g., a silicon wafer) with logic circuitry, light-emittingdiodes (“LED”) driver circuitry, and/or application-specific integratedcircuits (ASIC). The substrate 260 can be part of a singulated device(e.g., a die, a chip, a memory device, etc.), microelectronic structure,or the like.

FIG. 7B is a cross-sectional view of the bond pad 208 on the substrate260. The bond pad 208 can be formed by, for example, a plating process,a sputtering process, or other deposition processes. For example, aconductive material can be deposited on the substrate 260 andselectively removed using an etching process. The bond pad 208 can be analuminum pad comprising, without limitation, doped aluminum (e.g.,copper-doped aluminum, silicon-doped aluminum, etc.), aluminum alloys,or pure aluminum. Pure aluminum is a relatively soft metal and may besusceptible to significant damage, so dopants can be used to enhance themechanical properties of aluminum to control or limit damage caused by,for example, probing (e.g., probe testing). Additionally, doped aluminumcan have enhanced corrosion resistance in comparison to pure aluminum.In one doped embodiment, the bond pad 208 comprises copper-dopedaluminum that contains about 0.5% copper by weight. In otherembodiments, the copper-doped aluminum has other ranges of percentagesof copper. In another doped embodiment, the bond pad 208 comprisessilicon-doped aluminum that contains about 0.3%-0.5% silicon by weight.In other embodiments, the silicon-doped aluminum has other ranges ofpercentages of silicon. The doped aluminum pads can be terminal pads ofa TSV or other type of vertical electrical connection. In otherembodiments, the bond pad 208 can comprise, in whole or in part, copperor other electrically conductive materials. For example, the bond pad208 can comprise mostly copper by weight. The substrate 260 can includean inner layer dielectric (ILD) that helps prevent deformation of thecopper bond pad 208. Additionally or alternatively, a protection layer(e.g., a nickel-palladium layer) can be formed on the copper bond pad208.

FIG. 7C is a schematic cross-sectional view of the semiconductorstructure 202 contacted by a probe pin 270. After forming the bond pad208, the passivation material 250 (e.g., nitride, silicon nitride,oxide, silicon dioxide, etc.) can be delivered (e.g., deposited, grown,etc.) on an upper surface 264 of the bond pad 208 and an upper surface266 of the substrate 260. The passivation material 250 can be patternedand selectively removed to form the opening 252 such that the remainingportion of the passivation material 250 overlays the periphery 254 ofthe bond pad 208 and the substrate 260.

After forming the opening 252, the bond pad 208 is probed. FIG. 7C showsa probe pin 270 including a tip 269 physically contacting the probecontact area 230. Probing equipment (e.g., equipment configured toperform wafer-level probing) can target, for example, the probe contactarea 230 located at the center of the bond pad 208 to prevent damage tothe periphery 254 and to ensure that the tip 269 physically contacts thebond pad 208. Some probing protocols may include contacting the bond pad208 with a series of different probe pins to evaluate, for example,operation of electric structures (e.g. circuitry, LEDs, MEMs structures,or the like) and can result in a significant amount of damage to thebond pad 208. Variations in probe pins and probing equipment can alsoresult in probe pins contacting different locations of the bond pad 208.If the probing equipment becomes misaligned or malfunctions, probe pinsmay contact an area of the bond pad 208 outside of the probe contactarea 230.

FIG. 7D is a schematic cross-sectional view of the assembly 200 afterthe insulating material 210 has been deposited onto the upper surface264 of the bond pad 208 and an upper surface 288 of the passivationmaterial 250. The insulating material 210 can comprise, in whole or inpart, polyimide (e.g., a photosensitive polyimide with negative tone, aphotosensitive polyimide with positive tone, etc.), epoxy (includingepoxy variants), benzocyclobuten (BCB), or other dielectric material. Insome embodiments, the insulating material 210 is a multilayer filmcomprising an adhesive material and a polyimide layer. In otherembodiments, the insulating material 210 forms a single layer filmcomprising a dielectric material. The insulating material 210 can bepatterned and selectively removed (e.g., etched) to form the openings220. For example, each of the openings 220 can have a width W equal toor less than about 12 μm. In some embodiments, the widths H can be about9 μm to about 12 μm. The sizes of the openings 220 can be selected basedon the properties and thickness t of the insulating material 210 toprevent or limit scumming and/or the formation of residual features,such as the residual feature 150 discussed in connection with FIG. 3.

One expected advantage of several embodiments is if probe pins damageone of the exposed contact areas 240 a, 240 b, the other contact area240 a, 240 b may not be damaged. For example, a probe pin may contactand damage the contact area 240 a which may impair the formation of theopening 220 a and/or impair the formation of an interconnect structure.However, the contact area 240 b may not be damaged such that the opening220 b forms within specification to allow a portion of an interconnectstructure (not shown in FIG. 7D) to contact the contact area 240 b. Thenumber of openings 220 can be increased to increase the redundancy ofcontacts points between an interconnect structure and the bonding pad208 and/or the size, shape or locations of the openings 220 can bevaried. In some embodiments, the insulating material 210 defines threeor four openings to provide increased redundancy. For example, theinsulating material 210 can be etched to define two circular openingsand one elongated opening (e.g., a generally rectangular opening).

FIG. 7E is a cross-sectional view of an interconnection assembly 299including the assembly 200 and an interconnect structure in the form ofa pillar 300. The pillar 300 includes a base 310, an upper portion 320,and an intermediate portion 330 between the base 310 and upper portion320. The base 310 includes two portions 340 a, 340 b that extend throughthe openings 220 a, 220 b, respectively, and have surfaces 341 a, 341 bthat contact the areas 240 a, 240 b, respectively, to electricallycouple the pillar 300 to the bond pad 208. If one of the portions 340 a,340 b fails to electrically contact the bond pad 208, the other portion340 a, 340 b can maintain the desired electrical connection. Theportions 340 a, 340 b can be downward projections that define plugregions, which fill the openings 220.

One example method of forming the pillar 300 includes delivering abarrier material (e.g., titanium or other barrier material) onto theinsulating material 210 and the contact areas 240 a, 240 b. If the bondpad 208 is an aluminum pad, the barrier material can protect thealuminum (e.g., pure aluminum, doped aluminum, etc.) from damage (e.g.corrosion). The contact areas 240 a, 240 b can be substantially flat tofacilitate the formation of a generally uniform layer of barriermaterial that covers the entire contact areas 240 a, 240 b. Suchbarriers layers can protect the bond pad 208 from substances (e.g., asolution of acid, etchant, etc.) delivered through the openings 220 a,220 b. The intermediate portion 330 and upper portion 320 can be platedor formed using other techniques. In some embodiments, the base 310comprises copper, the intermediate portion 330 comprises nickel, and theupper portion 320 comprises tin, silver, and/or tin/silver alloys. Thebase 310, intermediate portion 330, and upper portion 320 can compriseother conductive materials. A distance D_(W) of the pillar 300 can beequal to about 30 μm, a thicknesses T_(B) can be equal to about 15 μm, athicknesses T₁ can be equal to about 3 μm, and a thickness T_(U) can beequal to about 15 μm. The number of layers, composition of the layers,dimensions of the layers, and dimensions of the pillar 300 (e.g.,height, width, length, etc.) can be selected based on themicroelectronic structure (e.g., stack of memory, LED structure, etc.)to be electrically coupled to the substrate 260. In other embodiments,the pillar 300 can have a one-piece or unitary construction and cancomprise a single conductive material, such as copper or aluminum.

With continued reference to FIG. 7E, the portion 222 of the insulatingmaterial 210 is positioned between the probe contact area 230 (see FIG.5) and the base 310 such that the base 310 contacts only areas of thebond pad 208 located outside of the probe contact area 230 (see FIG. 5).The substrate 260 can carry an array of similar pillars formed at adesired pitch (e.g., 30 μm, 40 μm, 50 μm, etc.). Components (e.g.,microelectronic substrates or structures, memory, etc.) can bevertically stacked utilizing the pillars to limit the overall packagesize. For example, memory can be stacked in vertical arrangement usingthe interconnection assemblies discussed herein.

FIG. 8 is a schematic top plan view of a portion of a wafer-levelinterconnect assembly 401 (“assembly 401”) including a bond pad assembly402 and an interconnect structure in the form of a pillar 400. Thepillar 400 has first and second ends 410, 412 and an elongated main body414 extending between the first and second ends 410, 412. A longitudinalaxis 420 of the pillar 400, as viewed from above, can be generallyperpendicular to longitudinal axes 430 a, 430 b of respective openings440 a, 440 b (illustrated in phantom). The pillar 400 can have agenerally oblong shape (e.g., a rectangular shape, an elliptical shape,etc.) to ensure that the pillar 400 covers both openings 440 a, 440 b.The pillar 440 can be generally centered over an underlying bond pad forgenerally vertical stacking, thereby avoiding offset die stacking Alength L can be about two times, three times, four times, five times, orten times the width W of the pillar 400. Other dimensions are alsopossible.

FIGS. 9A and 9B are cross-sectional views of the assembly 401. Thepillar 400 can further include first and second portions 450 a, 450 bextending through openings 440 a, 440 b, respectively, to contact aprobed bond pad 460. The first and second portions 450 a, 450 b arespaced apart from a damaged region 464 (FIG. 9A) and protrude from themain body 414. The pillar 400 electrically couples a structure 480(shown in phantom) to the bond pad 460. (The structure 480 is not shownin FIG. 8.) Different types of assembling processes can used to couplethe structure 480 (e.g., a microelectronic substrate, a semiconductorsubstrate, a microelectronic device, etc.) to the pillar 400. In someembodiments, a stack of semiconductor devices are stacked using theassemblies 401 to produce memory (e.g., random access memory, dynamicrandom-access memory, read-only memory, etc.). In some embodiments, thestructure 480 is memory and a substrate 403 is logic mountable to asubstrate. In some embodiments, the structure 480 is a MEMS structureand the substrate 403 is ASIC mountable to a circuit board (e.g., aprinted circuit board). In some embodiments, the structure 480 is an LEDand the substrate 403 is an LED driver mountable to a circuit board.

FIG. 10 shows an image of a wafer-level interconnect assembly 490(“assembly 490”), and FIG. 11 is an image of a portion 507 a of a pillar500. Referring to FIG. 10, the assembly 490 includes the pillar 500coupled to a bond pad assembly 501. The bond pad assembly 501 includes abond pad 502 and an insulating material 506 having two openings 504 a,504 b. The pillar 500 has portions 507 a, 507 b extending through theopenings 504 a, 504 b, respectively, to contact the bond pad 502.

The assembly 490 further includes a semiconductor structure 520 havingan active side 521, a backside 523, and an electrical connection 530.The active side 521 includes circuitry 524 that can include, withoutlimitation, the bond pad 502, integrated circuits, transistors, vias,metal layers, or the like. The electrical connection 530 can include abackside feature 538 (e.g., a redistribution line, a pad, etc.) and aTSV 540 extending through bulk silicon (e.g., bulk silicon of a wafer).The TSV 540 can electrically couple the circuitry 524 to the backsidefeature 538.

Referring to FIG. 11, the portion 507 a includes a substantially flatsurface 509 a that contacts a contact area 550 of the bond pad 502. Thesurface 509 a is substantially flatter than the surface of the bond pad162 shown in the conventional structure of FIG. 4 discussed above. Theinsulating layer 506 of FIG. 11 has been fully developed to provide thescum-free contact area 550 of the bond pad 502. An interface between theflat surface 509 a and the contact area 550 is also substantially freeof any corrosion and any residual feature that would cause electricalresistance to provide a reliable mechanical connection.

From the foregoing, it will be appreciated that specific embodiments ofthe invention have been described herein for purposes of illustration,but well-known structures and functions have not been shown or describedin detail to avoid unnecessarily obscuring the description of at leastsome embodiments of the invention. Where the context permits, singularor plural terms may also include the plural or singular term,respectively. Unless the word “or” is associated with an express clauseindicating that the word should be limited to mean only a single itemexclusive from the other items in reference to a list of two or moreitems, then the use of “or” in such a list shall be interpreted asincluding (a) any single item in the list, (b) all of the items in thelist, or (c) any combination of the items in the list.

Certain aspects of the technology described in the context of particularembodiments may be combined or eliminated in other embodiments.Embodiments disclosed herein can be used in chip-to-wafer assemblies,chip-to-chip assemblies, chip-to-substrates, or the like. A wide rangeof packages and electronic devices (e.g., cell phones computer, etc.),lighting systems, sensors (e.g., accelerometers, gyroscopes, etc.) caninclude the embodiments disclosed herein. The embodiments disclosedherein can be part of microelectronic devices, such as memory, LEDlighting systems, MEMS sensors, or the like. The embodiments disclosedherein can be used in large scale production. For example, an array ofspace part interconnect assemblies can be formed along a substrate (e.g.a wafer). An array of semiconductor devices can be mounted on theinterconnect assemblies. After forming the desired stack structures, thesubstrate can be singulated and the individual structures can bepackaged. Further, while advantages associated with certain embodimentshave been described in the context of those embodiments, otherembodiments may also exhibit such advantages, and not all embodimentsneed necessarily exhibit such advantages to fall within the scope of thepresent technology. Accordingly, the present disclosure and associatedtechnology can encompass other embodiments not expressly described orshown herein.

What is claimed is:
 1. An interconnect assembly, comprising: asemiconductor structure including a pad having a probe contact area, andan insulating material covering the probe contact area and having afirst opening and a second opening spaced apart from the first opening;and an interconnect structure including a first portion and a secondportion, the first portion extending through the first opening in theinsulating material to contact a first area of the pad, the secondportion extending through the second opening in the insulating materialto contact a second area of the pad.
 2. The interconnect assembly ofclaim 1 wherein the semiconductor structure further comprises: apassivation material that covers at least a portion of the pad, thepassivation material defines a passivation opening, a portion of theinsulating material defining the first opening and the second opening ispositioned within the passivation opening, and a through-silicon viaelectrically coupled to the pad.
 3. The interconnect assembly of claim 1wherein the pad is an aluminum bond pad.
 4. The interconnect assembly ofclaim 1, further comprising a microelectronic structure electricallycoupled to the pad by the interconnect structure.
 5. The interconnectassembly of claim 1 wherein a portion of the insulating material ispositioned between the probe contact area and the interconnectstructure.
 6. The interconnect assembly of claim 1 wherein the probecontact area is spaced apart from both the first opening and the secondopening.
 7. The interconnect assembly of claim 1, further comprisingpassivation material, the probe contact area is located at a centralregion of the pad such that the first opening and the second opening arepositioned along a portion of the pad located between the probe contactarea and the passivation material.
 8. The interconnect assembly of claim1 wherein the probe contact area is positioned substantially midwaybetween the first opening and the second opening.
 9. The interconnectassembly of claim 1 wherein the interconnect structure includes a pillarhaving a first end, a second end, and an elongated main body extendingbetween the first end and the second end in a direction substantiallyparallel to the pad.
 10. The interconnect assembly of claim 9 whereinthe first portion and the second portion are connected to and protrudefrom the elongate main body, and wherein the elongated main bodyoverlays a portion of the insulating material covering the probe contactarea.
 11. The interconnect assembly of claim 9 wherein the first portionand the second portion are connected to and extend from the elongatemain body.
 12. The interconnect assembly of claim 1 wherein theinterconnect structure is an oblong pillar.
 13. An assembly, comprising:a semiconductor structure including a probed pad having a probe contactarea; and an interconnect structure physically contacting at least onearea of the probed pad spaced laterally apart from the probe contactarea, wherein the interconnect structure is configured to electricallycouple a microelectronic structure to the semiconductor structure. 14.The assembly of claim 13 wherein the semiconductor structure includes aninsulating material covering the probe contact area and a probe mark, ifany, at the probe contact area, the interconnect structure extendsthrough the insulating material to contact the pad.
 15. The assembly ofclaim 13, further comprising a microelectronic structure includingcircuitry, the interconnect structure is coupled to the microelectronicstructure such that the circuitry is electrically coupled to thesemiconductor structure.
 16. The assembly of claim 13 wherein the pad isan aluminum pad.
 17. The assembly of claim 13 wherein the semiconductorstructure comprises: a first material between at least a portion of thepad and the interconnect structure, the first material comprising apassivation material; and a second material covering at least a portionof the first material and the probe contact area of the pad, the secondmaterial defining a first opening and a second opening; wherein theinterconnect structure extends through the first opening to contact afirst area of the pad and extends through the second opening to contacta second area of the pad.
 18. An assembly, comprising: a semiconductorstructure including a pad and an insulating material, the pad includinga probe contact area, the insulating material defining a first openingthat exposes a first region of the pad and a second opening that exposesa second region of the pad, the first region is spaced apart from thefirst opening.
 19. The assembly of claim 18, further comprising aninterconnect structure including a first portion and a second portion,the first portion extending through the first opening in the insulatingmaterial to contact the first region of the pad, the second portionextending through the second opening in the insulating material tocontact a second region of the pad.
 20. The assembly of claim 18 whereinthe insulating material overlays the pad.
 21. The assembly of claim 18wherein the semiconductor structure further comprises: a passivationmaterial that covers at least a portion of the pad, the passivationmaterial defines a passivation opening, a portion of the insulatingmaterial defining the first opening and the second opening is positionedwithin the passivation opening; and a through-silicon via electricallycoupled to the pad.
 22. The assembly of claim 18 wherein the pad is analuminium bond pad.
 23. A method of manufacturing an assembly,comprising: disposing material onto a bond pad of a semiconductorstructure to cover a probe contact area of the bond pad; forming a firstopening and a second opening in the material, wherein the first openingand the second opening are spaced apart from one another and are spacedapart from the probe contact area; and forming an interconnect structurethat extends through the first opening and the second opening to couplethe interconnect structure to the bond pad.
 24. The method of claim 23,further comprising contacting the probe contact area of the bond padwith a probe pin before disposing the material onto the bond pad. 25.The method of claim 23, further comprising coupling a semiconductor dieto the interconnect structure to electrically couple the semiconductordie to the bond pad of the semiconductor structure.
 26. The method ofclaim 23, further comprising: disposing passivation material onto thebond pad; and removing at least a portion of the passivation material toexpose the bond pad before disposing the material onto the bond pad. 27.The method of claim 23, further comprising forming the bond pad which iselectrically coupled to the through-silicon via of the semiconductorstructure before to disposing the material onto the bond pad.
 28. Themethod of claim 23 wherein forming the interconnect structure comprisesforming a pillar including a base, an upper portion, and an intermediateportion between the base and the upper portion.